Title:
Focused ion beam implantation as a high‑resolution lithography tool for advanced nanoelectronic devices

Abstract:
Focused Ion Beam (FIB) implantation offers a powerful and versatile alternative to conventional lithography for rapid prototyping of advanced nanoelectronic and electromechanical devices. In this talk, I will present a fast, high‑resolution and highly reproducible fabrication methodology based on localised implantation of Ga+ or Au+ followed by wet silicon etching, enabling the creation of suspended nanostructures and ultra‑thin silicon nanowires (SiNWs) in only two processing steps. This approach outperforms direct milling in precision, structural quality and scalability. A third step has been developed to tune the electrical properties of the devices by promoting embedded nanocrystals. 

I will discuss how controlled implantation and tailored annealing protocols allow doping engineering, defect manipulation, and the growth of embedded nanocrystals, unlocking new device functionalities. Two families of devices will be showcased: CMOS‑integrated SiNW FETs and single-charge transistors exhibiting Coulomb blockade due to embedded nanocrystals. Beyond electronics, I will highlight applications in nanomechanics, including ultra‑thin resonators, mechanically coupled arrays, fractal resonators with multi‑band operation, and bistable suspended structures enabling mechanical memory concepts.

The presentation will provide a comprehensive view of FIB‑implantation‑based patterning as a lithographic tool, covering its physical mechanisms, process windows, device demonstrations, and emerging opportunities for quantum technologies and next‑generation nanofabrication.